Parameters for pinholes in 15µm W foil at PFIB
nominal diam [µm] | current [nA] | depth [µm] | time [s] | outer diam [µm] | inner diam [µm] | |
|---|---|---|---|---|---|---|
| 1.3 | 1 | 460 | 1,8 | 0,34 | ||
| 1 | 1 | 200 | 550 | 1,6 | 0,31 | perfect timing, might be a bit tight for thicker areas |
Distance study for double pinholes in 15µm W foil at PFIB
All hole with parameters for one pinhole of 1µm, see above.
nominal distance (edge to edge) [µm] | mode | outer dist | inner dist | sink |
|---|---|---|---|---|
| 1 | serial | 0.43 | 1.26 | 2µm |
| 1,5 | serial | 0.8 | 1.8 | almost none |
| 2 | serial | 1.4 | 2.7 | none |
| 1 | parallel | 0,32 | 2µm | |
| 1,5 | parallel | 0,85 | none | |
| 2 | parallel | 1,3 | none |
serial mode parallel mode
Parameters for slits in sinks
nominal width [µm] | sink thickness [µm] | beam current [nA] | time [sec] | outer width [µm] | inner width [µm] |
|---|---|---|---|---|---|
| 0.7 | 9µm | 0.3 | 950 | 1 | 0.22 |
| 0.7 | 9µm | 1 | 370 | 1 | 0.25 |
| 0.7 | 9µm/6µm | 1/0.3 in 2 steps | 260/530 | 0.6 | 0.15 |
| +ca. 60 | 0.7 | 0.2 | |||
tests with 0.7µm (nominal width) in 9µm sink same with 15° tilt
Double Pin Hole _ DP1_v2
Diameter of the written structures = 0.7 um
Dose (Z) = 300 um
Serial writing
Parameters for Helios FIB
5x5mu sink at 65nA
time [sec] | z [µm] | depth as measured [µm] |
|---|---|---|
| 15s | 5.57 | 5.5 |
| 20 | 7.43 | 7 |
| 25 | 9.29 | 8.5 |
| 30 | 11.15 | 10 |
| 50 | 18.5 | 15-16µm (through) |
double slits DS2 in 5µm W foil at 1nA
z [µm] | nominal width [µm] | outer width [µm] | inner width [µm] | bridge [µm] |
|---|---|---|---|---|
| 5.5 | 0.5 | 0.8 | 0.11 | 0.25 |
| 11 | 0.5 | |||
| 20 | 0.5 |