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Parameters for pinholes in 15µm W foil at PFIB

nominal diam

[µm]

current

[nA]

depth

[µm]

time

[s]

outer diam

[µm]

inner diam

[µm]


1.31
4601,80,34
112005501,60,31perfect timing, might be a bit tight for thicker areas

Distance study for double pinholes in 15µm W foil at PFIB

All hole with parameters for one pinhole of 1µm, see above.  


nominal distance

(edge to edge)

[µm]

modeouter distinner distsink
1serial0.431.26

2µm

1,5serial0.81.8almost none
2serial1.42.7none
1parallel0,32
2µm
1,5parallel0,85
none
2parallel1,3
none

 

serial mode                                                                            parallel mode


Parameters for slits in sinks


nominal width

[µm]

sink thickness

[µm]

beam

current [nA]

time

[sec]

outer width

[µm]

inner width

[µm]

0.79µm0.395010.22
0.79µm137010.25
0.79µm/6µm1/0.3 in 2 steps260/5300.60.15



+ca. 600.70.2












   tests with 0.7µm (nominal width) in 9µm sink                    same with 15° tilt


Double Pin Hole _ DP1_v2



Diameter of the written structures = 0.7 um

Dose (Z) = 300 um

Serial writing


Parameters for Helios FIB


5x5mu sink at 65nA


time

[sec]

z

[µm]

depth as measured

[µm]

15s5.575.5
207.437
259.298.5
3011.1510
5018.515-16µm (through)

double slits DS2 in 5µm W foil at 1nA


z

[µm]

nominal width

[µm]

outer width

[µm]

inner width

[µm]

bridge

[µm]

5.50.50.80.110.25
110.5


200.5


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